DCA55 DCA-55 SEMICONDUCTOR ANALYZER PEAK ATLAS

DCA55 DCA-55 SEMICONDUCTOR ANALYZER PEAK ATLAS

REFERENCE 50825.M5. In stock 2 Items Brand Peak Electronics - Atlas
Condition New Surplus
€76.00
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Connect any way round to automatically identify and measure a wide range of semiconductor devices. The DCA55 will automatically identify the type of the part, pinout and many component parameters. Components supported include bipolar NPN/PNP transistors, darlingtons, diode-protected transistors, transistors with built-in resistors, enhancement mode MOSFETs, depletion mode MOSFETs, diodes, diode networks, LEDs, 2 and 3 lead bicolour LEDs, JFETs and many more. Further measurements are displayed including transistor gain, leakage current, pn voltage drops, LED voltages, MOSFET threshold voltages and much more. Even if you don't know anything about the part, just connect it in any configuration and the DCA55 will identify the type of part for you and also identify all the leads. Supplied with universal gold plated hook probes, battery and illustrated user guide. Not designed for in-circuit testing.

Key Features:

  • Automatic pinout detection and identification, connect any way round.
  • Automatic part type identification.
  • Supports semiconductors including transistors, MOSFETs, diodes, LEDs, JFETs and much more.
  • Detection of special component features such as transistors with diodes or transistors with built-in resistors.
  • Transistor gain measurement.
  • Transistor leakage measurement.
  • MOSFET gate threshold measurement.
  • Semiconductor voltage drop measurement.
  • Supplied with gold plated red/green/blue universal hook probes on 160mm flexible leads.
  • Clear backlit display.
  • Powered by single alkaline AAA cell (included).

Parameter

Min

Typ

Max

Note

Bipolar Junction Transistors

Measurable gain range (hFE)

4

 

20000

2

Gain resolution

 

1 hFE

2 hFE

2,8

Gain accuracy

±3% ±4 hFE

2,8

Gain jitter (3σ)

 

±0.2%

 

2,9

Gain test voltage VCEO

2.0V

 

3.0V

2

Gain test collector current IC

2.50mA ±5%

2

Measurable VBE range

0V

 

1.80V

 

VBE resolution

 

1mV

2mV

8

VBE accuracy

±2% ±4mV

 

Darlington VBE range

0.95V

1.00V

1.80V

3

Darlington VBE range (shunted)

0.75V

0.80V

1.80V

4

Ge VBE range (ICLEAK<10μA)

0V

 

0.50V

 

Ge VBE range (ICLEAK>10μA)

0V

 

0.55V

 

Base-emitter shunt threshold

50kW

60kW

70kW

 

Collector leakage test voltage

3.0V

4.0V

5.1V

 

Collector leakage range

0.010mA

 

1.750mA

 

Collector leakage resolution

 

1μA

2μA

 

Collector leakage accuracy

±2% ±4μA

 

Si Acceptable leakage

0mA

 

0.2mA

6

Ge Acceptable leakage

0mA

 

1.75mA

6

MOSFETs

Gate threshold range

0.1V

 

5.0V

5

Gate threshold accuracy

±2% ±20mV

5

Gate threshold drain current

2.50mA ±5%

 

Min. gate-source resistance

 

8kW

 

 

Depletion drain test current

0.5mA

 

5.5mA

 

Diodes/LEDs

Diode test current

 

 

5.0mA

 

VF resolution

 

1mV

2mV

 

VF accuracy

±2% ±4mV

 

VF for LED identification

1.50V

 

4.00V

 

 

Parameter

Min

Typ

Max

Note

JFETs

Drain-source test current

0.5mA

 

5.5mA

 

SCRs/Triacs

Gate test current

 

4.5mA

 

7

Load test current

 

5.0mA

 

 

General Specifications

Peak test current into S/C

-5.5mA

 

5.5mA

1

Peak test voltage across O/C

-5.1V

 

5.1V

1

Short circuit threshold

5W

10W

15W

 

Analysis duration

1 Sec

3 Secs

6 Secs

 

Battery voltage range (AAA)

1.0V

1.5V

1.6V

 

Battery voltage range (GP23)

8.0V

12V

 

 

Inactivity power-down period

 

60 Secs

 

 

Operating temperature range

10°C

 

40°C

10

 

50°F

 

104°F

10

Battery warning threshold

1.1V (AAA Ver), 9.0V (GP23 Ver)

 

Dimensions (body)

103 x 70 x 20 mm

 

 

4.1" x 2.8" x 0.8"

 

 

Notes:


1.   Between any pair of test clips.
2.   Collector current of 2.50mA and hFE≤2000.
3.   Resistance across reverse biased base-emitter > 60kW.
4.   Resistance across reverse biased base-emitter < 60kW.
5.   Drain-source current of 2.50mA.
6.   VCE=4.0V±1.0V. Base automatically tied to emitter with 910kW to reduce pickup.
7.   Thyristor quadrant I, Triac quadrants I and III.
8.   BJT with no shunt resistors.
9.   Tested for Si BJT with hFE=1500.
10.   Subject to acceptable LCD visibility.

Dimensions per product (excluding leads) 103 x 70 x 20 mm (4.1" x 2.8" x 0.8")
Dimensions per product (packaged) 200 x 138 x 30 mm (7.9" x 5.5" x 1.2")
   
Weight per product (nett) 0.098kg (3.5oz)
Weight per product (packaged inc docs) 0.166kg (5.9oz)
   
Bulk order multiple 20, 80
   
Harmonisation / Commodity / Tariff Code 9030 8200 00 GB
   
Fundamental Materials Plastic, glass and metal.
   
Country of manufacture England (UK)
   
Certification CE, WEEE, ROHS

All orders are shipped within 1–2 business days after payment is received.

  • Greece: Orders are shipped via ACS Courier.

  • International: Orders are shipped via FedEx.

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